Exploring spin squeezing in the Mott insulating regime: Role of anisotropy, inhomogeneity, and hole doping

by T. Hernandez Yanes, A. Niezgoda, E. Witkowska
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Reference:
Exploring spin squeezing in the Mott insulating regime: Role of anisotropy, inhomogeneity, and hole doping,
T. Hernandez Yanes, A. Niezgoda, E. Witkowska,
Phys. Rev. B, 109, 214310, 2024.
Bibtex Entry:
@article{hernandezyanes2024ess,
  title = {Exploring spin squeezing in the Mott insulating regime: Role of anisotropy, inhomogeneity, and hole doping},
  author = {T. Hernandez Yanes and A. Niezgoda and E. Witkowska},
  journal = {Phys. Rev. B},
  volume = {109},
  issue = {21},
  pages = {214310},
  numpages = {14},
  year = {2024},
  month = {Jun},
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevB.109.214310},
  url = {https://link.aps.org/doi/10.1103/PhysRevB.109.214310},
 eprint={2403.06521},
 archivePrefix={arXiv},  
 primaryClass={cond-mat.quant-gas},
arXiv = {https://arxiv.org/abs/2403.06521}
}